丝印：8110DW；Package：SOT-223；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

文件：402.56 Kbytes 页数：6 Pages

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丝印：8110DW；Package：SOT-223；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP complement: PBHV9110DW

文件：387.22 Kbytes 页数：6 Pages

PANJIT

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丝印：8110DW；Package：SOT-223；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

文件：387.78 Kbytes 页数：6 Pages

PANJIT

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