PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：116.75 Kbytes 页数：7 Pages

DIODES

美台半导体

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：287.63 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：BCP53H；Package：SC-73；80 V, 1 A PNP medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

文件：1.27175 Mbytes 页数：16 Pages

NEXPERIA

安世

80 V, 1 A NPN medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

文件：1.25919 Mbytes 页数：16 Pages

NEXPERIA

安世

丝印：BCP53H；Package：SC-73；80 V, 1 A PNP medium power transistors

General description PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High collector current capability IC and ICM ■ Three current gain selections ■ High power dissipation capability ■ High-temperature applicat

文件：1.27242 Mbytes 页数：16 Pages

NEXPERIA

安世

80 V, 1 A PNP medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

文件：1.27175 Mbytes 页数：16 Pages

NEXPERIA

安世

丝印：BCP53H；Package：SOT223；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • High-temperature applications

文件：275.29 Kbytes 页数：14 Pages

NEXPERIA

安世

80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • High-temperature applications

文件：275.29 Kbytes 页数：14 Pages

NEXPERIA

安世

General Purpose PNP Epitaxial Planar Transistor

Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features • High collector current and low VCE(SAT) • Complement to BCP56L3 • Pb-free package

文件：265.14 Kbytes 页数：7 Pages

CYSTEKEC

全宇昕科技

PNP Silicon AF Transistor (For AF driver and output stages High collector current)

PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M...BCP 56M(NPN)

文件：31.43 Kbytes 页数：4 Pages

SIEMENS

西门子