丝印：BCP；Package：SOT-89-3L；Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low VCE(sat). ● Complements the 2SD1766

文件：1.64063 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：BCP；Package：SOT-89；Medium power transistor(-32V,-2A)

FEATURES Low VCE(SAT)=-0.5V(Typ.) (IC/IB=-2A/-0.2A). Complementary the 2SD1766. APPLICATIONS Epitaxial planar type. PNP silicon transistor.

文件：483.3 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BCp；Package：SOT-89；NPN 7 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a SOT89 plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and R

文件：251.8 Kbytes 页数：11 Pages

恩XP

丝印：BCp；Package：SOT-89；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：BCP；Package：PDIP-8；Programmable Precision References

The TL431A, B integrated circuits are three−terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V with two external resistors. These devices exhibit a wide operating current range

文件：448.91 Kbytes 页数：21 Pages

ONSEMI

安森美半导体

丝印：BCP；Package：PDIP-8；Programmable Precision References

The TL431A, B integrated circuits are three−terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V with two external resistors. These devices exhibit a wide operating current ra

文件：471.08 Kbytes 页数：22 Pages

ONSEMI

安森美半导体

丝印：BCp；Package：SOT-89；NPN 7 GHz wideband transistor

文件：72.36 Kbytes 页数：11 Pages

PHI

PHI

丝印：BCp；Package：SOT-89；NPN 7 GHz wideband transistor

文件：263.58 Kbytes 页数：11 Pages

PHI

PHI

Epitaxial Planar Transistor

FEATURES The BCP1213 is designed for using in power amplifier applications or power switching applications.

文件：595.64 Kbytes 页数：2 Pages

SECOS

喜可士

Planar High Performance Transistor

Description The BCP156 is designed for general purpose switching and amplifier applications. Features * 3 Amp Continuous Current * 60 Volt VCEO * Low Saturation Voltage

文件：600.31 Kbytes 页数：2 Pages

SECOS

喜可士