45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：249.19 Kbytes 页数：12 Pages

NEXPERIA

安世

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

文件：48.04 Kbytes 页数：5 Pages

INFINEON

英飞凌

45 V, 1 A NPN medium power transistors

General description NPN medium power transistor series. Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low side switches ■ MOSFET drivers ■ Amplifiers

文件：152.71 Kbytes 页数：15 Pages

恩XP

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

文件：131.42 Kbytes 页数：5 Pages

SIEMENS

西门子

丝印：BCP54/10；Package：SOT223；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：249.19 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：BCP54/10；Package：SOT223；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according

文件：239.12 Kbytes 页数：12 Pages

NEXPERIA

安世

45 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：273.44 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：P5410T；Package：SC-73；45 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：274.29 Kbytes 页数：14 Pages

NEXPERIA

安世

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：131.1 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：827.56 Kbytes 页数：7 Pages

INFINEON

英飞凌