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BC858U

Generalpurposeapplication

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-30V •ComplementarypairwithBC848U

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

BC858U

GeneralPurposeTransistor

GeneralPurposeTransistor PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–323/SC–70whichisdesignedforlowpowersurfacemountapplications. Features Wedeclarethatthematerialofproductcompliancewith RoHSrequir

FS

First Silicon Co., Ltd

BC858UF

PNPSiliconTransistor(GeneralpurposeapplicationSwitchingapplication)

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-30V •ComplementarypairwithBC848UF

AUK

AUK corp

BC858UF

PNPSiliconTransistor

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-30V •ComplementarypairwithBC848UF

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

BC858V

Ideallysuitedforautomaticinsertion

RECTRON

Rectron Semiconductor

BC858W

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ForComplementaryWithNPNTypeBC846W/847W/848W

KECKEC CORPORATION

KEC株式会社

BC858W

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

Diotec

Diotec Semiconductor

BC858W

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●Ideallysuitedforautomaticinsertion. ●Powerdissipation.(PC=200mW) APPLICATIONS ●Generalpurposeswitchingandamplificationapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BC858W

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

Diotec

Diotec Semiconductor

BC858W

PNPGeneralPurposeTransistor

■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

详细参数

  • 型号:

    BC858CW RF

  • 功能描述:

    两极晶体管 - BJT Transistor 200mW

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
DIODES
16+
SOT23
3000
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
询价
Diodes
24+
SOT323
5000
全现原装公司现货
询价
Diodes
20+
SOT323
36800
原装优势主营型号-可开原型号增税票
询价
DIODES/美台
2447
2020
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
DIODES/美台
23+
SOT-323
50000
全新原装正品现货,支持订货
询价
DIODES/美台
21+
SOT323
13880
公司只售原装,支持实单
询价
DIODES
SOT23
3000
一级代理 原装正品假一罚十价格优势长期供货
询价
DIODES/美台
24+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
DIODES
23+
SOT23
7300
专注配单,只做原装进口现货
询价
DIODES
2025+
SOT23
7695
全新原厂原装产品、公司现货销售
询价
更多BC858CW RF供应商 更新时间2025-5-16 15:13:00