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BC848CDW

丝印:1G;Package:SOT363;NPN Silicon Epitaxial General Purpose Transistors

文件:2.41026 Mbytes 页数:15 Pages

FUTUREWAFER

BC848CDW1

Dual General Purpose Transistors

文件:110.48 Kbytes 页数:11 Pages

ONSEMI

安森美半导体

BC848CDW1T1G

Dual General Purpose Transistors

文件:110.48 Kbytes 页数:11 Pages

ONSEMI

安森美半导体

BC848CDXV6T1

Dual General Purpose Transistors

文件:102.11 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

BC848CDXV6T1G

Dual General Purpose Transistors

文件:102.11 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

BC848CDXV6T1G

Dual General Purpose Transistors

文件:138.67 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

BC848CDXV6T5

Dual General Purpose Transistors

文件:102.11 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

BC848CDXV6T5G

Dual General Purpose Transistors

文件:102.11 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

BC848CD

TRANSISTOR

AiT-Semi

创瑞科技

BC848CDW1

双 NPN 双极晶体管

The Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications. • Device Marking:BC846BDW1T1 = 1BBC847BDW1T1 = 1FBC847CDW1T1 = 1GBC848BDW1T1 = 1KBC848CDW1T1 = 1L\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable;

ONSEMI

安森美半导体

技术参数

  • VCEO (V):

    30

  • hFE/ Min/Max:

    420/800

  • hFE/ IC(mA)/VCE(Volts):

    2/5

  • VCE(sat) / Max (Volts):

    0.60

  • VCE(sat) /IC/IB (mA):

    100/5

  • fT TYP (MHz):

    >100

  • Style:

    E

  • Package:

    SC-88

供应商型号品牌批号封装库存备注价格
ON
24+
SOT563DPBF
6000
询价
ON
24+
SOT23/6
1068
原装现货假一罚十
询价
ON
23+
SC70-6
1050
专营高频管模块,全新原装!
询价
ON
05+
SOT23/6
2296
原装现货海量库存欢迎咨询
询价
ON
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
ON
25+
SOT-363
2987
绝对全新原装现货供应!
询价
ON
23+
SOT-363
8560
受权代理!全新原装现货特价热卖!
询价
ON
25+23+
SOT363
66853
绝对原装正品现货,全新深圳原装进口现货
询价
三年内
1983
只做原装正品
询价
ON
20+
SOT-363
35830
原装优势主营型号-可开原型号增税票
询价
更多BC848CD供应商 更新时间2026-1-27 16:30:00