Dual General Purpose Transistors

文件：110.48 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

双 NPN 双极晶体管

The Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications. • Device Marking:BC846BDW1T1 = 1BBC847BDW1T1 = 1FBC847CDW1T1 = 1GBC848BDW1T1 = 1KBC848CDW1T1 = 1L\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable\n;

ONSEMI

安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件：459.88 Kbytes 页数：5 Pages

ETL

亚历电子

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L Features • Pb−Free Package is Avail

文件：106.43 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：133.42 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S and NSV Prefixes for Automotive and Other Applications Requiri

文件：144.9 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

文件：110.48 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Transistors

Willas

威伦