丝印：3400；Package：SOT-23；Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：182.77 Kbytes 页数：3 Pages

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唯圣电子

Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability APPLICATION Load/Power Switching Interfacing Switching

文件：845.59 Kbytes 页数：4 Pages

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唯圣电子

丝印：3401；Package：SOT-23；Plastic-Encapsulate MOSFETS

Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

文件：843.06 Kbytes 页数：5 Pages

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唯圣电子

Plastic-Encapsulate MOSFETS

DESCRIPTION DS(ON) The BC3402 uses advanced trench technology to provide excellent R low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or in PWM application. FEATURES Lead free product is acquired Surface mount package AP

文件：1.12861 Mbytes 页数：4 Pages

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唯圣电子

丝印：3404；Package：SOT-23；Plastic-Encapsulate MOSFETS

General FEATURE ● TrenchFET Power MOSFET ● Lead free product is acquired ● Surface mount package APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：276.91 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Power MOSFET

Features ⚫ High power and current handing capability ⚫ VDS= 30V,ID= 5.8A RDS(on)

文件：786.58 Kbytes 页数：5 Pages

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慧芯电子

丝印：R6；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Features ⚫ Fast switching ⚫ Low gate charge and RDS(on) ⚫ Low reverse transfer capacitances ⚫ VDS= 30V,ID= 3.6A RDS(on)

文件：471.59 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

丝印：R6；Package：SOT-23；Plastic-Encapsulate MOSFETS

DESCRIPTION The BC3406 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：260.62 Kbytes 页数：4 Pages

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唯圣电子

丝印：3407；Package：SOT-23；Plastic-Encapsulate MOSFETS

General Description The BC3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：183.53 Kbytes 页数：3 Pages

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P-Channel Enhancement Mode Power MOSFET

Features ⚫ Low gate chargre ⚫ High density cell design for ultra low RDS(on) ⚫ VDS= -30V,ID= -4.1A RDS(on)

文件：677.71 Kbytes 页数：5 Pages

HUIXIN

慧芯电子