P-Channel Enhancement Mode Power MOSFET

Features ⚫ Low gate chargre ⚫ High density cell design for ultra low RDS(on) ⚫ VDS= -30V,ID= -4.1A RDS(on)

文件：677.71 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

Plastic-Encapsulate MOSFETS

General Description -CAR for automotive and other applications requiring unique site and AEC-Q101 qualified and PPAP capable. The BC3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：244.91 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

Plastic-Encapsulate MOSFETS

General Description The BCL3407DW uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：1.7084 Mbytes 页数：5 Pages

GWSEMI

唯圣电子

P-Channel Enhancement Mode Power MOSFET

文件：221.42 Kbytes 页数：6 Pages

BELLING

上海贝岭