金属氧化物半导体场效应管：P-Channel,单通道,-30V（VDS Limit）

The BLM3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. • High power and current handing capability\n• Lead free product is acquired\n• Surface mount Package;

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P-Channel Enhancement Mode Power MOSFET

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沟槽栅金属氧化物半导体场效应管

\n The BLM3407AY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • ● High density cell design for ultra low Rdson\n• ● Fully characterized Avalanche voltage and current;

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P-Channel Enhancement Mode Power MOSFET

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