P-Channel Enhancement Mode Power MOSFET

Belling

上海贝岭

沟槽栅金属氧化物半导体场效应管

\n The BLM3407AY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. • ● High density cell design for ultra low Rdson\n• ● Fully characterized Avalanche voltage and current;

Belling

上海贝岭

P-Channel 30V (D-S) 4A P-MOSFET

文件：106.33 Kbytes 页数：5 Pages

bookly

百力微电子

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -5.1A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 115mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：232.11 Kbytes 页数：4 Pages

CET

华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5.1A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. RDS(ON) = 115mW @VGS = -2.5V.

文件：628.62 Kbytes 页数：4 Pages

CET-MOS

华瑞