Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.6 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

文件：64.93 Kbytes 页数：13 Pages

HitachiHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

文件：118.01 Kbytes 页数：11 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

文件：145.92 Kbytes 页数：11 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

文件：145.92 Kbytes 页数：11 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

文件：145.92 Kbytes 页数：11 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

文件：118.01 Kbytes 页数：11 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

文件：145.92 Kbytes 页数：11 Pages

RENESAS

瑞萨