Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod)

文件：129.699 Kbytes 页数：9 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod)

文件：129.699 Kbytes 页数：9 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas

瑞萨

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

文件：123.97 Kbytes 页数：2 Pages

MOSPEC

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Silicon Controlled Rectifiers

Silicon Controlled Rectifiers . PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated Surface for Reliability and Uniformity

文件：88.12 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(5.0A,20-60V)

文件：227.94 Kbytes 页数：3 Pages

MOSPEC

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