Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.8 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini

文件：300.97 Kbytes 页数：11 Pages

RENESAS

瑞萨

HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

文件：125.41 Kbytes 页数：2 Pages

MOSPEC

统懋

Numeric Display

Numeric Display 7.6 mm (.3”) Series

文件：22.69 Kbytes 页数：1 Pages

PANASONIC

松下

SCHOTTKY BARRIER RECTIFIERS(5.0A,20-60V)

文件：227.94 Kbytes 页数：3 Pages

MOSPEC

统懋