Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz • High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode.

文件：80.11 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

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Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz • High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode

文件：215.35 Kbytes 页数：10 Pages

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