Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features Built in Biasing Circuit; To reduce using parts cost & PC board space. High gain PG = 24 dB typ. (f = 900 MHz) Low noise NF = 1.4 dB typ. (f = 900 MHz) Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) Provide mini mold packages: CMPAK-4 (SOT-343mo

文件：111.22 Kbytes 页数：9 Pages

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Built in Biasing Circuit MOS FET IC

文件：105.42 Kbytes 页数：9 Pages

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Built in Biasing Circuit MOS FET IC

文件：105.42 Kbytes 页数：9 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod)

文件：129.699 Kbytes 页数：9 Pages

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瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod)

文件：129.699 Kbytes 页数：9 Pages

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PNP silicon annlar transistors

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