BB506CFS-TL-E资料datasheet下载供应商报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
BB506CFS-TL-E	文件：105.42 Kbytes Page：9 Pages	Built in Biasing Circuit MOS FET IC 文件：105.42 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
BB506CFS-TL-H	文件：105.42 Kbytes Page：9 Pages	Built in Biasing Circuit MOS FET IC 文件：105.42 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
BB506M	文件：129.699 Kbytes Page：9 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod) 文件：129.699 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
BB506MFS-TL-E	文件：129.699 Kbytes Page：9 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod) 文件：129.699 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多BB506CFS-TL-E供应商更新时间2025-12-22 14:33:00