Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ??8 V)

Silicon Variable Capacitance Diode ● For AM tuning applications ● Specified tuning range 1 … 8 V

文件：45.36 Kbytes 页数：3 Pages

SIEMENS

西门子

Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8 V)

Infineon

英飞凌

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

文件：37.61 Kbytes 页数：7 Pages

PHI

PHI

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

文件：269.48 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

文件：351.48 Kbytes 页数：54 Pages

STMICROELECTRONICS

意法半导体