BB505CES

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

•BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.5dBtyp.atf=900MHz •Highgain;PG=24dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto190VatC=200pF,Rs=0conditions

BB505G

SiliconVariableCapacitanceDiodes

BB505M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.5dBtyp.atf=900MHz •Highgain;PG=24dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto190VatC=200pF,Rs=0conditions. •Provide

BB505MES

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.5dBtyp.atf=900MHz •Highgain;PG=24dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto190VatC=200pF,Rs=0conditions. •Provide

BC505

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation

BCR505

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit)

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=10kΩ)

BCR505

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Builtinbiasresistor(R1=2.2kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

BCR505

NPNSiliconDigitalTransistor

BCR505

NPNSiliconDigitalTransistor

BD505

NPNSILICONANNULARTRANSISTORS

NPNSILICONANNULARTRANSISTORS NPNSILICONAUDIOTRANSISTORS