Build in Biasing Circuit MOS FET IC UHF RF Amplifier

• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions

文件：111.98 Kbytes 页数：9 Pages

RENESAS

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High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes 页数：12 Pages

NSC

国半

HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

文件：125.41 Kbytes 页数：2 Pages

MOSPEC

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N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS

The µPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complementary MOS FETs are provided in one package. • Automatic mounting

文件：88.77 Kbytes 页数：9 Pages

NEC

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