Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features Built in Biasing Circuit; To reduce using parts cost & PC board space. High gain PG = 24 dB typ. (f = 900 MHz) Low noise NF = 1.4 dB typ. (f = 900 MHz) Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) Provide mini mold packages: CMPAK-4 (SOT-343mo

文件：111.22 Kbytes 页数：9 Pages

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Built in Biasing Circuit MOS FET IC

文件：105.42 Kbytes 页数：9 Pages

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Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features Built in Biasing Circuit; To reduce using parts cost & PC board space. High gain PG = 24 dB typ. (f = 900 MHz) Low noise NF = 1.4 dB typ. (f = 900 MHz) Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) Provide mini mold packages: CMPAK-4 (SOT-343mo

文件：111.22 Kbytes 页数：9 Pages

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Built in Biasing Circuit MOS FET IC

文件：105.42 Kbytes 页数：9 Pages

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瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

文件：185.42 Kbytes 页数：10 Pages

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Built in Biasing Circuit MOS FET IC

文件：105.42 Kbytes 页数：9 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC

文件：105.42 Kbytes 页数：9 Pages

RENESAS

瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Built in Biasing Circuit; To reduce using parts cost & PC board space.\nHigh gain\n   PG = 24 dB typ. (f = 900 MHz)\nLow noise\n   NF = 1.4 dB typ. (f = 900 MHz)\nLow output capacitance\n   Coss = 1.1 pF typ. (f = 1 MHz)\nProvide mini mold packages: CMPAK-4 (SOT-343mod);

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