Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Appli

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HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Build in Biasing Circuit MOS FET IC\nUHF/VHF RF Amplifier •  Build in Biasing Circuit; To reduce using parts cost & PC board space.\n•  High gain;\n•  Wide supply voltage range; Applicable with 5V to 9V supply voltage.\n•  Provide mini mold packages; MPAK-4R(SOT-143 var.);

HITACHI

日立

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION These Easy-to-Drive FASTSWITCH NPN power transistors are specially designed for high reliability industrial and professional power driving applications such us motor drives and off-line switching power supplies. ETD transistors will operate using easy drive circuits at up to 100KHz;

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STMICROELECTRONICS

意法半导体

Low-Cost, Low-Power, 110MHz Op Amp with Disable

文件：299.85 Kbytes 页数：6 Pages

NSC

国半

20W TO 140W STEP-DOWN SWITCHING REGULATOR FAMILY

DESCRIPTION The GS-R400/2 series is a family of small sized high current, high voltage step-down switching regulators. The integral heatsink allows a large power handling capability and it provides also an effective shielding to minimize EMI. FEATURES MTBF in excess of 500,000 hours

文件：115.15 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体