BB501M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi

BB501M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi

BB501MAS-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain;PG=21.5dBtyp.atf=900MHz •Lownoise;NF=1.85dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemi

BC501

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation

BC501S

HardToolStorageModule,S-Hook

TheBucketWorkCenterisanecosystemthatwillrevampthewayaLinemanworks.ItallowsLinemantocustomizetheirworkspace,justlikeother professionalscustomizetheirofficespace.TheKleinToolsHardToolStorageModulehasmultipleslotstoaccommodateawidevarietyofLineman tools.

BD501

iscSiliconNPNPowerTransistors

DESCRIPTION ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=50V(Min) 80V(Min) ·HighPowerDissipation APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementary