BB503M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

BB503M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

BB503MCS-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

BC503

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation

BCR503

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivecircuit)

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ)

BCR503

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

BCR503

NPNSiliconDigitalTransistor

BCR503

NPNSiliconDigitalTransistor

BD503N

50AmpereStandardTypeNegativeBlockRectifierDiodesforAutomotiveAlternators

BD503P

50AmpereStandardTypePositiveBlockRectifierDiodesforAutomotiveAlternators