BAS16V资料使用说明书行情报价DIODES第4页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BAS16VVQ	文件：585.29 Kbytes Page：5 Pages	SURFACE MOUNT SWITCHING DIODE ARRAY Features  Fast Switching Speed  Low Forward Voltage: Maximum of 0.715V at 1mA  Fast Reverse Recovery: Maximum of 4ns  Low Capacitance: Maximum of 1.5pF  Low Leakage Current  Triple Isolated Fast Switching Diode Array  Ultra-Small Surface Mount Package  Thermally Efficient Copper Al 文件：585.29 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
BAS16VVQ-7	文件：585.29 Kbytes Page：5 Pages	丝印：KJP；Package：SOT563；SURFACE MOUNT SWITCHING DIODE ARRAY Features  Fast Switching Speed  Low Forward Voltage: Maximum of 0.715V at 1mA  Fast Reverse Recovery: Maximum of 4ns  Low Capacitance: Maximum of 1.5pF  Low Leakage Current  Triple Isolated Fast Switching Diode Array  Ultra-Small Surface Mount Package  Thermally Efficient Copper Al 文件：585.29 Kbytes 页数：5 Pages	DIODES 美台半导体	DIODES
BAS16VY	文件：150.73 Kbytes Page：20 Pages	High-speed switching diodes General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1 文件：150.73 Kbytes 页数：20 Pages	恩XP	恩XP
BAS16VY	文件：81.04 Kbytes Page：12 Pages	Triple high-speed switching diodes General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1 文件：81.04 Kbytes 页数：12 Pages	恩XP	恩XP
BAS16VY	文件：150.73 Kbytes Page：20 Pages	High-speed switching diodes General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Repetitive peak reverse voltage: VRRM ≤ 1 文件：150.73 Kbytes 页数：20 Pages	恩XP	恩XP
BAS16VY	文件：213.26 Kbytes Page：11 Pages	丝印：16；Package：TSSOP6；High-speed switching diode 1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive peak 文件：213.26 Kbytes 页数：11 Pages	NEXPERIA 安世	NEXPERIA
BAS16VY	文件：773.33 Kbytes Page：21 Pages	丝印：16；Package：SC-88；High-speed switching diodes Features and benefits  High switching speed: trr  4 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  100 V  AEC-Q101 qualified  Low capacitance  Reverse voltage: VR  100 V  Small SMD plastic packages 文件：773.33 Kbytes 页数：21 Pages	NEXPERIA 安世	NEXPERIA
BAS16VY	文件：773.63 Kbytes Page：21 Pages	High-speed switching diodes General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages Applications  High-speed switching  General-purpose switching 文件：773.63 Kbytes 页数：21 Pages	NEXPERIA 安世	NEXPERIA
BAS16VY-Q	文件：220.7 Kbytes Page：11 Pages	丝印：16；Package：TSSOP6；High-speed switching diode 1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive peak 文件：220.7 Kbytes 页数：11 Pages	NEXPERIA 安世	NEXPERIA
BAS16V_07	文件：213.66 Kbytes Page：3 Pages	DUAL SURFACE MOUNT SWITCHING DIODE 文件：213.66 Kbytes 页数：3 Pages	DIODES 美台半导体	DIODES

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技术参数

Compliance (Only Automotive supports PPAP)：
Standard (Q on Request)
Configuration：
Dual
Polarity：
Anode
Power Rating (mW)：
150 mW
N)：
No Y/N
Peak RepetitiveReverse VoltageVRRM (V)：
75 V
Reverse Recovery Time trr (ns)：
4 ns
Maximum Average Rectifier Current IO (mA)：
200 mA
Maximum Peak Forward Surge Current IFSM (A)：
2 A
Forward Voltage Drop VF @ IF (mA)：
0
Maximum ReverseCurrent IR (µA)：
1 µA
Maximum Reverse Current IR @ VR (V)：
75 V
V(BR)R (V) Min (µA)：
75
TotalCapacitance CT (pF)：
2 pF
VF(V) Max @ IF=1.0mA：
0.9
VF(V) Max @ IF=10mA：
1
Packages：
SOT563

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市讯顺达科技有限公司	BAS16V	扬杰	25+	SOT-563	10000	扬杰原厂一级代理商,价格优势!	询价
洪芯国际半导体（深圳）有限公司	BAS16V	长电	26+	SOT-563	86720	全新原装正品价格最实惠假一赔百	询价
深圳市星宇佳科技有限公司	BAS16V	CJ/长电	2020+	SOT-563	3000	原装现货支持BOM配单服务	询价
浙江永芯科技有限公司	BAS16V	YANGJIE	24+	SOT-563	50000	原厂直销全新原装正品现货欢迎选购	询价
现代芯城（深圳）科技有限公司	BAS16V		24+	N/A	48000	一级代理-主营优势-实惠价格-不悔选择	询价
富凯科技(深圳）有限公司	BAS16V	CJ/长电	24+	SOT-563	50000	只做原装，欢迎询价，量大价优	询价
深圳市嵩宏达科技有限公司	BAS16V	CJ/长电	24+	SOT-563	50000	全新原装,一手货源,全场热卖!	询价
深圳市力拓辉电子有限公司	BAS16V	长晶科技	21+	SOT-563	50	只做原装鄙视假货15118075546	询价
深圳市毅创腾电子科技有限公司	BAS16VY	恩XP		SOT343	1900	正品原装--自家现货-实单可谈	询价
深圳市一线半导体有限公司	BAS16VY,115	恩XP	24+		9000		询价

更多BAS16V供应商更新时间2026-1-18 14:02:00

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