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BAS16V

150mW Switching Diodes

Features •FastSwitchingSpeed •HighConductance •LeadFreePlating •ForGeneralPurposeSwitchingApplications •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuf

MCCMicro Commercial Components

美微科美微科半导体公司

BAS16V

SWITCHING DIODE

FEATURES •FastSwitchingSpeed •ForGeneralPurposeSwitchingApplications •HighConductance

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

BAS16V

0.3A , 100V Plastic-Encapsulated Transistors

FEATURES •Fastswitchingspeed •ForGeneralPurposeSwitchingApplications •HighConductance

SECOS

SeCoS Halbleitertechnologie GmbH

BAS16V

SOT-563 Plastic-Encapsulate Diodes

SWITCHINGDIODE FEATURES •FastSwitchingSpeed •ForGeneralPurposeSwitchingApplications •HighConductance •Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH •MoistureSensitivityLevel1

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

BAS16V

DUAL SURFACE MOUNT SWITCHING DIODE

Features •FastSwitchingSpeed •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •ForGeneralPurposeSwitchingApplications •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3)

DIODESDiodes Incorporated

达尔科技

BAS16V

DUAL SURFACE MOUNT SWITCHING DIODE

DIODESDiodes Incorporated

达尔科技

BAS16V

SOT-23 Plastic-Encapsulate Switching Diode

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

BAS16V

SWITCHING DIODE

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

BAS16V-7

DUAL SURFACE MOUNT SWITCHING DIODE

Features •FastSwitchingSpeed •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •ForGeneralPurposeSwitchingApplications •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3)

DIODESDiodes Incorporated

达尔科技

BAS16VA

SURFACE MOUNT SWITCHING DIODE ARRAY

Features •FastSwitchingSpeed •LowForwardVoltage:Maximumof0.715Vat1mA •FastReverseRecovery:Maximumof4ns •LowCapacitance:Maximumof1.5pF •LowLeakageCurrent •Ultra-SmallSurfaceMountPackage •ThermallyEfficientCopperAlloyLeadframeforHighPowerDissipation •To

DIODESDiodes Incorporated

达尔科技

BAS16VA-7

SURFACE MOUNT SWITCHING DIODE ARRAY

Features •FastSwitchingSpeed •LowForwardVoltage:Maximumof0.715Vat1mA •FastReverseRecovery:Maximumof4ns •LowCapacitance:Maximumof1.5pF •LowLeakageCurrent •Ultra-SmallSurfaceMountPackage •ThermallyEfficientCopperAlloyLeadframeforHighPowerDissipation •To

DIODESDiodes Incorporated

达尔科技

BAS16VAQ

SURFACE MOUNT SWITCHING DIODE ARRAY

Features FastSwitchingSpeed LowForwardVoltage:Maximumof0.715Vat1mA FastReverseRecovery:Maximumof4ns LowCapacitance:Maximumof1.5pF LowLeakageCurrent TripleIsolatedFastSwitchingDiodeArray Ultra-SmallSurfaceMountPackage ThermallyEfficientCopperAl

DIODESDiodes Incorporated

达尔科技

BAS16VAQ-7

SURFACE MOUNT SWITCHING DIODE ARRAY

Features FastSwitchingSpeed LowForwardVoltage:Maximumof0.715Vat1mA FastReverseRecovery:Maximumof4ns LowCapacitance:Maximumof1.5pF LowLeakageCurrent TripleIsolatedFastSwitchingDiodeArray Ultra-SmallSurfaceMountPackage ThermallyEfficientCopperAl

DIODESDiodes Incorporated

达尔科技

BAS16VPT

SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.15 Ampere

FEATURE *Smallsurfacemountingtype.(SOT-563) *Highspeed.(TRR=1.5nSecTyp.) *Suitableforhighpackingdensity. *Maximumtotalpowerdisspationis150mW. *Peakforwardcurrentis150mA. APPLICATION *Ultrahighspeedswitching

CHENMKOCHENMKO

CHENMKO

BAS16VTWPT

FAST SWITCHING DIODE ARRAY VOLTAGE 75 Volts CURRENT 150 mAmpere

FEATURE *Smallsurfacemountingtype.(SOT-563) *Highspeed.(TRR=1.5nSecTyp.) *Suitableforhighpackingdensity. *Maximumtotalpowerdisspationis200mW. *Peakforwardcurrentis300mA. *Leadfreedevices APPLICATION *Ultrahighspeedswitching *Forgeneralpurposeswitching

CHENMKOCHENMKO

CHENMKO

BAS16VV

High-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BAS16VV

Triple high-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BAS16VV

High-speed switching diodes

Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BAS16VV

SURFACE MOUNT SWITCHING DIODE ARRAY

Features FastSwitchingSpeed LowForwardVoltage:Maximumof0.715Vat1mA FastReverseRecovery:Maximumof4ns LowCapacitance:Maximumof1.5pF LowLeakageCurrent Ultra-SmallSurfaceMountPackage ThermallyEfficientCopperAlloyLeadframeforHighPower Dissipation T

DIODESDiodes Incorporated

达尔科技

BAS16VV

High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaultrasmallandflatleadSOT666Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetiti

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    BAS16V

  • 制造商:

    DIODES

  • 制造商全称:

    Diodes Incorporated

  • 功能描述:

    DUAL SURFACE MOUNT SWITCHING DIODE

供应商型号品牌批号封装库存备注价格
NXP/安世
24+
SOT-563
100000
原装正品,优势供应,支持配单
询价
长晶科技
21+
SOT-563
50
全新原装鄙视假货15118075546
询价
CJ/长电
2020+
SOT-563
3000
原装现货支持BOM配单服务
询价
YANGJIE
24+
SOT-563
50000
原厂直销全新原装正品现货 欢迎选购
询价
CJ(江苏长电/长晶)
23+
SOT-563
100000
原装现货、价格优势、可开发票
询价
NXP
23+
SOT363
12300
询价
NXP
SOT343
1900
正品原装--自家现货-实单可谈
询价
NXP
9000
询价
DIODES
2015+
SOT563
26898
一级代理原装现货
询价
PHILIPS
2020+
SOT363
680
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多BAS16V供应商 更新时间2024-4-28 15:11:00