3.0SMC16

Marking：16；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

ACDBTS160R-HF

Marking：16；Package：SOD-123F；SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Lowreversecurrent. -AEC-Q101Qualified&PPAP.

BAS16VY

Marking：16；Package：TSSOP6；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeak

BAS16VY

Marking：16；Package：SC-88；High-speed switching diodes

Featuresandbenefits Highswitchingspeed:trr4ns Lowleakagecurrent Repetitivepeakreversevoltage: VRRM100V AEC-Q101qualified Lowcapacitance Reversevoltage:VR100V SmallSMDplasticpackages

BAS16VY-Q

Marking：16；Package：TSSOP6；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeak

CMZ16A

Marking：16；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications •Surgeabsorber Features (1)Powerdissipation:PD=2W (2)Zenervoltage:Vz=12to51V (3)Theuseofsmall,thinsurface-mountpackageisoptimumwayforhigh-densitymounting. Nickname:M-FLATTM

DTA144E

Marking：16；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTA144ECA

Marking：16；Package：SOT-23；PNP Digital Transistors (Built-in Resistors)

FEATURES *Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). *Onlytheon/offconditionsneedtobesetforoperation,makingdevicedesigneasier. *Thebiasresistorsconsistofthin-filmresistorswi

DTA144EE

Marking：16；Package：SOT-523；Digital Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypesavailable(DTC). ●Built-inbiasingresistors,R1=R2. ●Alsoavailableinleadfreeversion. APPLICATIONS ●ThePNPstyledigitaltransistor.

DTA144EE

Marking：16；Package：SOT-523；PNP Digital Transistors (Built-in Resistors)

FEATURES *Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). *Onlytheon/offconditionsneedtobesetforoperation,makingdevicedesigneasier. *Thebiasresistorsconsistofthin-filmresistorswi