丝印：160；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：160；Package：UQFN(RSW)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features • Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error (Maximum Over Temperature): • ±1% (C Version) • ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 页数：42 Pages

TI

德州仪器

丝印：160；Package：UQFN(RSW)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features • Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error (Maximum Over Temperature): • ±1% (C Version) • ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 页数：42 Pages

TI

德州仪器

丝印：160；Positive Temperature Coefficient (PTC) Data Sheet

Description The 1812 series provides surface mount resettable overcurrent protection with holding current from 0.1A to 3.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le

文件：834.52 Kbytes 页数：11 Pages

BRIGHTKING

君耀

丝印：160；Package：SOT-363；Dual N-Channel Enhancement Mode MOSFET

Feature Advanced Trench Process Technology Fast Switching Speed Low Threshold Voltage ESD Protected up to 2KV (HBM) Halogen-Free & Lead-Free Applications Load Switch for Portable Devices Voltage controlled small signal switch

文件：6.38593 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：160；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Feature Advanced Trench Process Technology Low Threshold Voltage Fast Switching Speed Halogen-Free & Lead-Free ESD Protected up to 2KV (HBM) Applications Load Switch for Portable Devices Voltage controlled small signal switch

文件：6.55075 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：160；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Feature ESD Protected up to 2KV (HBM) Low Threshold Voltage Fast Switching Speed Halogen-Free & Lead-Free Advanced Trench Process Technology Applications Load Switch for Portable Devices Voltage controlled small signal switch

文件：6.30469 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：160；Package：DO-214AB；Surface Mount TYS

文件：396.6 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：160A；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：160A；Package：SMC；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANG

鲁光电子