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BAS116-T1

SURFACE MOUNT FAST SWITCHING DIODE

VeryLowLeakageCurrent HighConductance SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

BAS116T-7

SURFACE MOUNT LOW LEAKAGE DIODE

Features •SmallSurfaceMountPackage •Ultra-LowReverseLeakageCurrent(5nA@VR=75V) •LowCapacitance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) MechanicalData •Case:SOD523 •CaseMaterial:MoldedPlastic

DIODES

Diodes Incorporated

BAS116T-7-F

SURFACE MOUNT LOW LEAKAGE DIODE

Features •Ultra-SmallSurfaceMountPackage •VeryLowLeakageCurrent •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4)

DIODES

Diodes Incorporated

BAS116TT1G

Switching Diode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116TW

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

VOLTAGE100VoltsPOWER200mWatts FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2nAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •IncompliancewithEURoHS2002/95/ECdirectives MECHANICALDATA •Case:SOT-363plastic

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BAS116UDJ

DUAL SURFACE MOUNT SWITCHING DIODE

Features •Ultra-SmallSurfaceMountPackage(1.0x0.8mm) •Ultra-LowProfilePackage(0.45mm) •UltraLowLeakageCurrent(5nA@VR=75V) •LowCapacitance •IdealforBatteryPoweredPortableApplications •LeadFreeByDesign/RoHSCompliant(Note1) •HalogenandAntimonyFreeGreenDe

DIODES

Diodes Incorporated

BAS116UDJ-7

DUAL SURFACE MOUNT SWITCHING DIODE

Features •Ultra-SmallSurfaceMountPackage(1.0x0.8mm) •Ultra-LowProfilePackage(0.45mm) •UltraLowLeakageCurrent(5nA@VR=75V) •LowCapacitance •IdealforBatteryPoweredPortableApplications •LeadFreeByDesign/RoHSCompliant(Note1) •HalogenandAntimonyFreeGreenDe

DIODES

Diodes Incorporated

BAS116V

SURFACE MOUNT LOW LEAKAGE DIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) MechanicalData •Case:SOT563 •CaseMaterial:MoldedPlastic,“Green”Mo

DIODES

Diodes Incorporated

BAS116V-7

SURFACE MOUNT LOW LEAKAGE DIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) MechanicalData •Case:SOT563 •CaseMaterial:MoldedPlastic,“Green”Mo

DIODES

Diodes Incorporated

BAS116VY

Marking:2J;Package:TSSOP6;Low-leakage triple switching diode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolatedtriplediodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:max.5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxim

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    BAS1

  • 制造商:

    NXP Semiconductors

  • 功能描述:

    DIODE, HIGHS, 100V, 220MA, SOD882

  • 功能描述:

    DIODE, HIGHS, 100V, 220MA, SOD882; Diode

  • Type:

    Ultrafast Recovery; Forward Current

  • If(AV):

    215mA; Repetitive Reverse Voltage Vrrm

  • Max:

    100V; Forward Voltage VF

  • Max:

    1.25V; Reverse Recovery Time trr

  • Max:

    4ns; Diode Case

  • Style:

    SOD-882 ;RoHS

  • Compliant:

    Yes

供应商型号品牌批号封装库存备注价格
NXP(恩智浦)
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NEXPERIA/安世
2021+
SOD-882
9000
原装现货,随时欢迎询价
询价
NEXPERIA
2024
SOD-882
18729
全新原装正品,现货销售
询价
NEXPERIA
24+
SOD-882
107048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
NXP/恩智浦
23+
SOD882
12000
一级代理原装现货
询价
NXP/恩智浦
1733+
NA
10000
询价
NXP/恩智浦
24+
SOD882
10000
原装正品,假一罚十!
询价
NXP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
NXP
23+
SMD
7850
只做原装正品假一赔十为客户做到零风险!!
询价
NXP
2149+
SOD882
14175
原装现货
询价
更多BAS1供应商 更新时间2025-5-24 15:23:00