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BAS116LP3

ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE

Features •Ultra-SmallLeadlessSurfaceMountPackage(0.6x0.3mm) •Ultra-LowProfilePackage(0.3mm) •VeryLowLeakageCurrent •LowCapacitance •IdealforCompactBatteryPoweredPortableElectronics •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimo

DIODESDiodes Incorporated

美台半导体

BAS116LP3-7

ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE

Features •Ultra-SmallLeadlessSurfaceMountPackage(0.6x0.3mm) •Ultra-LowProfilePackage(0.3mm) •VeryLowLeakageCurrent •LowCapacitance •IdealforCompactBatteryPoweredPortableElectronics •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimo

DIODESDiodes Incorporated

美台半导体

BAS116LPH4

SURFACE MOUNT SWITCHING DIODE

Features •FastSwitchingSpeed •Ultra-SmallLeadlessSurfaceMountPackage(1.0*0.6mm) •Ultra-LowProfilePackage(0.4mm) •LowForwardVoltage •FastReverseRecovery •LowCapacitance •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

美台半导体

BAS116LPH4-7B

SURFACE MOUNT SWITCHING DIODE

Features •FastSwitchingSpeed •Ultra-SmallLeadlessSurfaceMountPackage(1.0*0.6mm) •Ultra-LowProfilePackage(0.4mm) •LowForwardVoltage •FastReverseRecovery •LowCapacitance •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

美台半导体

BAS116LS

Marking:9C;Package:DFN1006BD-2;Low-leakage diode

1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Switchingtime:max.trr=3μs •Lowleakagecurrent:max.IR=5nA •Repetitivepeakreversevolt

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116LS-Q

Marking:9C;Package:DFN1006BD-2;Low-leakage diode

1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Switchingtime:max.trr=3μs •Lowleakagecurrent:max.IR=5nA •Repetitivepeakreversevolt

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116LT1

Switching Diode

Thisswitchingdiodehasthefollowingfeatures: •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1toorderthe7inch/3,000unitreel UseBAS116LT3toorderthe13inch/10,000unitreel

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

BAS116LT1

Switching Diode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116LT1

Switching Diode

Thisswitchingdiodehasthefollowingfeatures: •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1toorderthe7inch/3,000unitreel UseBAS116LT3toorderthe13inch/10,000unitreel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116LT1

SURFACE MOUNT SWITCHING DIODE

SURFACEMOUNTSWITCHINGDIODE •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

详细参数

  • 型号:

    BAS1

  • 功能描述:

    二极管 - 通用,功率,开关 DIODE SW TAPE-7

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 产品:

    Switching Diodes

  • 峰值反向电压:

    600 V

  • 正向连续电流:

    200 A

  • 最大浪涌电流:

    800 A

  • 恢复时间:

    2000 ns

  • 正向电压下降:

    1.25 V

  • 最大反向漏泄电流:

    300 uA

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    ISOTOP

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
NEXPERIA/安世
25+
SOD882
600000
NEXPERIA/安世全新特价BAS16L即刻询购立享优惠#长期有排单订
询价
恩XP
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NEXPERIA/安世
2021+
SOD-882
9000
原装现货,随时欢迎询价
询价
NEXPERIA
24+
SOD-882
107048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
恩XP
23+
SOD882
12000
一级代理原装现货
询价
恩XP
1733+
NA
10000
询价
恩XP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
恩XP
23+
SMD
7850
只做原装正品假一赔十为客户做到零风险!!
询价
恩XP
2149+
SOD882
14175
原装现货
询价
恩XP
1733+
NA
10000
询价
更多BAS1供应商 更新时间2025-7-26 8:19:00