RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats in

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

恩XP

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：807.26 Kbytes 页数：15 Pages

恩XP

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. Features  Designed for Wide Instantaneous Bandwidt

文件：468.68 Kbytes 页数：15 Pages

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

文件：502.63 Kbytes 页数：18 Pages

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.  Typical Doherty Single--Carrier

文件：474.4 Kbytes 页数：16 Pages

恩XP

Ultra-Stable Performance

文件：275.46 Kbytes 页数：6 Pages

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280W GaN WIDEBAND PULSED POWER

文件：923.62 Kbytes 页数：11 Pages

RFMD

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380W GaN WIDEBAND PULSED

文件：773.12 Kbytes 页数：11 Pages

RFMD

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380W GaN WIDEBAND PULSED

文件：773.12 Kbytes 页数：11 Pages

RFMD

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