ATC100B1R1BT500XT

RF Power LDMOS Transistor

N−ChannelEnhancement−ModeLateralMOSFET This2WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof728to960MHz. Features •Greaternegativegate−sourcevoltagerangeforimprovedClassC operation •On−chipmatching(50ohmin

ATC100B1R1BT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These32WRFpowerLDMOStransistorsaredesignedforcellularbase stationapplicationsrequiringverywideinstantaneousbandwidthcapability coveringthefrequencyrangeof1805to1880MHz. Features DesignedforWideInstantaneousBandwidt

ATC100B1R1BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.