ATC100B390JT500XT

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

ATC100B390JT500XT

N-Channel Enhancement-Mode Lateral MOSFET

Features Advancedhighperformancein--packageDoherty Greaternegativegate--sourcevoltagerangeforimprovedClassC operation Designedfordigitalpredistortionerrorcorrectionsystems

ATC100B390JT500XT

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

ATC100B390JT500XT

RF Power LDMOS Transistor