RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.27025 Mbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.19064 Mbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

QFN68

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