ATC100B1R8BT500XT说明书PDF资料批发供应-114ic电子网

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ATC100B1R8BT500XT	文件：385.37 Kbytes Page：17 Pages	RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This93WasymmetricalDohertyRFpowerLDMOStransistorisdesignedfor cellularbasestationapplicationscoveringthefrequencyrangeof1427to 1517MHz. Features •Advancedhighperformancein−packageDoherty •Greaternegativegate−sourcevoltagerangeforimprovedClassCoperation	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC100B1R8BT500XT	文件：557.94 Kbytes Page：16 Pages	N--Channel Enhancement--Mode Lateral MOSFETs Features GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation DesignedforDigitalPredistortionErrorCorrectionSystems OptimizedforDohertyApplications InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC100B1R8BT500XT	文件：948.24 Kbytes Page：19 Pages	RF Power LDMOS Transistors	freescaleFreescaleiscreatingasmarter 飞思卡尔	freescale
ATC100B1R8BT500XT	文件：672.75 Kbytes Page：17 Pages	RF LDMOS Wideband Integrated Power Amplifier	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
ATC100B1R8BT500XT	文件：989.74 Kbytes Page：22 Pages	RF LDMOS Wideband Integrated Power Amplifiers	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp

更多ATC100B1R8BT500XT供应商更新时间2024-5-1 15:00:00