RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

文件：1.4439 Mbytes 页数：19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：1.14836 Mbytes 页数：22 Pages

恩XP

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：1.0447 Mbytes 页数：19 Pages

恩XP

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：457.66 Kbytes 页数：13 Pages

恩XP

RF Power LDMOS Transistors

文件：948.24 Kbytes 页数：19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

文件：1.10464 Mbytes 页数：20 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体