RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

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FREESCALEFreescale Semiconductor, Inc

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RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

文件：574.41 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

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RF Power Field Effect Transistor

865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Perfor

文件：813.97 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

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RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

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RF Power Field Effect Transistor

文件：748.8 Kbytes 页数：11 Pages

FREESCALEFreescale Semiconductor, Inc

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RF LDMOS Wideband Integrated Power Amplifiers

文件：1.14836 Mbytes 页数：22 Pages

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RF LDMOS Wideband Integrated Power Amplifier

文件：672.75 Kbytes 页数：17 Pages

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RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：1.0447 Mbytes 页数：19 Pages

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RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：457.66 Kbytes 页数：13 Pages

恩XP