ATC100B0R6BT250XT

RF LDMOS Wideband Integrated Power Amplifiers

RFLDMOSWidebandIntegratedPowerAmplifiers TheMW7IC2240Nwidebandintegratedcircuitisdesignedwithon-chipmatchingthatmakesitusablefrom2000to2200MHz.Thismulti-stagestructureisratedfor24to32Voltoperationandcoversalltypicalcellularbasestationmodulationformatsin

ATC100B101JT500XT

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. •TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

ATC100B102JT50XT

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

ATC100B102JT50XT

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. •TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

ATC100B120JT500XT

RF Power Field Effect Transistor

880MHz,10WAVG.,28VSINGLEN-CDMALATERALN-CHANNELBROADBANDRFPOWERMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge-signal,common-sourceamplifierapplica

ATC100B130JT500XT

RF Power Field Effect Transistor

880MHz,10WAVG.,28VSINGLEN-CDMALATERALN-CHANNELBROADBANDRFPOWERMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge-signal,common-sourceamplifierapplica

ATC100B150JT500XT

RF Power Field Effect Transistor

880MHz,10WAVG.,28VSINGLEN-CDMALATERALN-CHANNELBROADBANDRFPOWERMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge-signal,common-sourceamplifierapplica

ATC100B240JT500XT

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

ATC100B390JT500XT

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

ATC100B3R0BT500XT

RF Power Field Effect Transistor

865--960MHz,28WAVG.,28VSINGLEW--CDMALATERALN--CHANNELRFPOWERMOSFET DesignedforCDMAbasestationapplicationswithfrequenciesfrom865to960MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats. •TypicalSingle--CarrierW--CDMAPerfor