RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：1.1895 Mbytes 页数：17 Pages

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RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：1.1895 Mbytes 页数：17 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：1.1895 Mbytes 页数：17 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：1.1895 Mbytes 页数：17 Pages

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RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

文件：502.63 Kbytes 页数：18 Pages

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RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. Features  Designed for Wide Instantaneous Bandwidt

文件：468.68 Kbytes 页数：15 Pages

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N--Channel Enhancement--Mode Lateral MOSFETs

Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

文件：557.94 Kbytes 页数：16 Pages

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RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

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RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：1.01021 Mbytes 页数：18 Pages

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RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：1.01021 Mbytes 页数：18 Pages

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