RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

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RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. Features  Designed for Wide Instantaneous Bandwidt

文件：468.68 Kbytes 页数：15 Pages

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RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., Input Signal PA

文件：543.07 Kbytes 页数：17 Pages

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RF Power Field Effect Transistors

文件：443.39 Kbytes 页数：13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件：437.43 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：1.24777 Mbytes 页数：23 Pages

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RF LDMOS Integrated Power Amplifier

文件：726.22 Kbytes 页数：12 Pages

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RF Power LDMOS Transistor

文件：389.33 Kbytes 页数：16 Pages

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RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：457.66 Kbytes 页数：13 Pages

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