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ATC100A

Ultra-Stable Performance

文件:275.46 Kbytes 页数:6 Pages

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ATC100A0R5BT500XT

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件:1.1895 Mbytes 页数:17 Pages

恩XP

恩XP

ATC100A220GT500XT

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件:1.1895 Mbytes 页数:17 Pages

恩XP

恩XP

ATC100A3R3BT500XT

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件:1.1895 Mbytes 页数:17 Pages

恩XP

恩XP

ATC100A8R2CT500XT

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1990 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件:1.1895 Mbytes 页数:17 Pages

恩XP

恩XP

ATC100A0R2BT

280W GaN WIDEBAND PULSED POWER

文件:923.62 Kbytes 页数:11 Pages

RFMD

威讯联合

ATC100A0R2BT

380W GaN WIDEBAND PULSED

文件:773.12 Kbytes 页数:11 Pages

RFMD

威讯联合

ATC100A0R7BT

380W GaN WIDEBAND PULSED

文件:773.12 Kbytes 页数:11 Pages

RFMD

威讯联合

ATC100A0R7BT

280W GaN WIDEBAND PULSED POWER

文件:923.62 Kbytes 页数:11 Pages

RFMD

威讯联合

ATC100A100JP150XT

Gallium Arsenide pHEMT RF Power Field Effect Transistor

文件:1.13431 Mbytes 页数:25 Pages

恩XP

恩XP

技术参数

  • 精度:

    ±2%

  • 额定电压:

    150V

  • 材质(温度系数):

    P90

供应商型号品牌批号封装库存备注价格
ATC
05+
原厂原装
8051
只做全新原装真实现货供应
询价
ATMEL
25+
dip
18000
原厂直接发货进口原装
询价
ACT
22+
原厂原封
8200
原装现货库存.价格优势!!
询价
AMERTECH
21
全新原装 货期两周
询价
ATC
24+
SMD
500
原装进口现货
询价
ATC
23+
NA
738
专做原装正品,假一罚百!
询价
ATC
18+
0603
12500
全新原装正品,本司专业配单,大单小单都配
询价
ATC
15+
311
原装正品
询价
ATC
23+
SMD
8510
原装正品代理渠道价格优势
询价
ATC
21+
SMD
1000
绝对公司现货,不止网上数量!原装正品,假一赔十!
询价
更多ATC100A供应商 更新时间2025-12-1 14:33:00