丝印：AT120C；Package：SOT223；Schottky barrier double diodes

FEATURES •Low switching losses •Capability of absorbing very high surge current •Fast recovery time •Guard ring protected •Plastic SMD package. APPLICATIONS •Low power switched-mode power supplies •Rectification •Polarity protection. DESCRIPTION Planar Schottky barrier double diodes

文件：368.91 Kbytes 页数：8 Pages

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丝印：AT120S；Package：SOT223；Schottky barrier double diodes

FEATURES •Low switching losses •Capability of absorbing very high surge current •Fast recovery time •Guard ring protected •Plastic SMD package. APPLICATIONS •Low power switched-mode power supplies •Rectification •Polarity protection. DESCRIPTION Planar Schottky barrier double diodes

文件：368.91 Kbytes 页数：8 Pages

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丝印：AT160A；Package：SC-73；Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

文件：196.84 Kbytes 页数：8 Pages

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丝印：AT160C；Package：SC-73；Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

文件：196.87 Kbytes 页数：8 Pages

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丝印：AT160S；Package：SC-73；Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

文件：196.93 Kbytes 页数：8 Pages

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丝印：AT160S；Package：SC-73；Schottky barrier double diode

1. General description Planar Schottky barrier double diode encapsulated in a SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plasti

文件：196.49 Kbytes 页数：8 Pages

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丝印：AT125Q；Package：WQFN；SN74AHCT125-Q1 Automotive Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250 mA per JESD 17 • Functional Safety Capable – Documentation available to aid safety system design 2 Applications • Enable or disable a digital signal • Controlling an indicator LED • Debounce a switch • E

文件：1.51325 Mbytes 页数：25 Pages

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德州仪器

丝印：AT126Q；Package：WQFN；SN74AHCT126-Q1 Automotive Quadruple Bus Buffer Gate with 3-State Outputs

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN (WBQA) package • Operating range of 4.5 V to 5.5 V • ±8-mA output dr

文件：1.60308 Mbytes 页数：25 Pages

TI

德州仪器

丝印：AT138Q；Package：WQFN；SN74AHCT138Q-Q1 Automotive 3-Line to 8-Line Decoders/Demultiplexers

1 Features • Qualified for Automotive Applications • EPIC (Enhanced-Performance Implanted CMOS) Process • Inputs Are TTL-Voltage Compatible • Designed Specifically for High-Speed Memory Decoders and Data-Transmission Systems • Incorporates Three Enable Inputs to Simplify Cascading and/or D

文件：2.23927 Mbytes 页数：26 Pages

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德州仪器

丝印：AT139Q；Package：WQFN；SN74AHCT139-Q1 Automotive Dual 2-Line to 4-Line Decoders or Demultiplexers

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN package • Operating range 4.5V to 5.5V VCC • TTL-Compatible inputs

文件：1.80304 Mbytes 页数：27 Pages

TI

德州仪器