Automotive Grade SiC Power Module

Features · HSDIP20 package with the 4th Generation SiC-MOSFET · VDSS = 750V · Low RDS(on) · High-speed switching possible · Low switching losses · Tvjmax = 175°C · Compact design · With high thermal conductivity isolation · Integrated NTC temperature sensor · 4.2kV AC 1s insulation

文件：1.18189 Mbytes 页数：15 Pages

ROHM

罗姆

HSDIP20, 750V, 47A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module

The BST47T1P4K01 is a high-performance SiC molded module rated for 750V, designed with a 6-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature even • HSDIP20 package with the 4th Generation SiC-MOSFET\n• VDSS = 750V\n• Low RDS(on)\n• High-speed switching possible\n• Low switching losses\n• Tvjmax = 175°C\n• Compact design\n• With high thermal conductivity isolation\n• Integrated NTC temperature sensor\n• 4.2kV AC 1s insulation;

ROHM

罗姆

DIP

BYD/比亚迪

上传：佛山市芯光达科技有限公司

PG-TSDSON-8

Infineon

英飞凌

上传：深圳市威尔健半导体有限公司

TSDSON-8

INFINEON/英飞凌

上传：深圳市威尔健半导体有限公司