SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR COMPLEMENTARY TYPE – BST15

文件：15.94 Kbytes 页数：1 Pages

ZETEX

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • General purpose switching and amplification.

文件：40.73 Kbytes 页数：8 Pages

PHI

PHI

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • General purpose switching and amplification.

文件：102.71 Kbytes 页数：6 Pages

恩XP

TRANSISTOR (NPN)

FEATURES ● Low Current ● High Voltage APPLICATIONS ● General Purpose Switching and Amplification

文件：346.11 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Current ● High Voltage APPLICATIONS ● General Purpose Switching and Amplification

文件：1.17375 Mbytes 页数：3 Pages

JIANGSU

长电科技

NPN High-Voltage Transistors

Features ● Low current (max. 50 mA) ● High voltage (max. 300 V).

文件：52.3 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：AT2；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Current High Voltage APPLICATIONS General Purpose Switching and Amplification

文件：1.49182 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：AT2；Package：SOT89；NPN high-voltage transistors

FEATURES •Low current (max. 100 mA) •High voltage (max. 350 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16.

文件：281.62 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：AT2；Package：SOT89；NPN high-voltage transistors

FEATURES •Low current (max. 100 mA) •High voltage (max. 350 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16.

文件：281.64 Kbytes 页数：7 Pages

NEXPERIA

安世

Automotive Grade SiC Power Module

Features · TRCDRIVE packTM with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Low stray inductance - 5.7nH · Tvjmax = 175°C · Compact design · High power density · Press-fit contact technology · Integrated NTC temper

文件：1.125 Mbytes 页数：15 Pages

ROHM

罗姆