丝印：AT2；Package：SOT89；NPN high-voltage transistors

FEATURES •Low current (max. 100 mA) •High voltage (max. 350 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16.

文件：281.62 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：AT2；Package：SOT89；NPN high-voltage transistors

FEATURES •Low current (max. 100 mA) •High voltage (max. 350 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16.

文件：281.64 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：AT2；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Current High Voltage APPLICATIONS General Purpose Switching and Amplification

文件：1.49182 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：AT2；Package：SOT-89；GENERAL PURPOSE TRANSISTOR

文件：243.47 Kbytes 页数：3 Pages

HOTTECH

合科泰

丝印：AT244；Package：SSOP；OCTAL BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS

3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Inputs Are TTL-Voltage Compatible Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations to Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-m Process 500-mA

文件：404.83 Kbytes 页数：14 Pages

TI

德州仪器

丝印：AT244；Package：SSOP；OCTAL BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS

3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Inputs Are TTL-Voltage Compatible Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations to Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-m Process 500-mA

文件：404.83 Kbytes 页数：14 Pages

TI

德州仪器

丝印：AT244；Package：TSSOP；OCTAL BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS

3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Inputs Are TTL-Voltage Compatible Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations to Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-m Process 500-mA

文件：404.83 Kbytes 页数：14 Pages

TI

德州仪器

丝印：AT244；Package：TSSOP；OCTAL BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS

3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Inputs Are TTL-Voltage Compatible Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations to Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-m Process 500-mA

文件：404.83 Kbytes 页数：14 Pages

TI

德州仪器

丝印：AT244；Package：TSSOP；OCTAL BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS

3-State Outputs Drive Bus Lines or Buffer Memory Address Registers Inputs Are TTL-Voltage Compatible Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations to Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-m Process 500-mA

文件：404.83 Kbytes 页数：14 Pages

TI

德州仪器

丝印：AT245；Package：TSSOP；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

3-State Outputs Drive Bus Lines Directly Inputs Are TTL-Voltage Compatible Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-
m Process 500-mA Typical Latch-Up Immunity at

文件：893.33 Kbytes 页数：24 Pages

TI

德州仪器