Automotive Grade SiC Power Module

Features · TRCDRIVE packTM with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Low stray inductance - 5.7nH · Tvjmax = 175°C · Compact design · High power density · Press-fit contact technology · Integrated NTC temper

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ROHM

罗姆

TRCDRIVE pack™, 1200V, 394A, Half-bridge, Automotive Grade SiC Power Module

BST400D12P4A101 is a half-bridge module consisting of SiC-MOSFETs, suitable for Automotive application, Inverter, Converter, and (Hybrid) electrical vehicles EV/HEV. • TRCDRIVE pack™with the 4th Generation SiC-MOSFET\n• VDSS = 1200V\n• Low RDS(on)\n• High-speed switching possible\n• Low switching losses\n• Low stray inductance - 5.7nH\n• Tvjmax = 175℃\n• Compact design\n• High power density\n• Press-fit contact technology\n• Integrated NTC temperature sensor\n• ;

ROHM

罗姆

BYD/比亚迪
DIP

BYD/比亚迪

上传：佛山市芯光达科技有限公司

Infineon
PG-TSDSON-8

Infineon

英飞凌

上传：深圳市威尔健半导体有限公司

INFINEON/英飞凌
TSDSON-8

INFINEON/英飞凌

上传：深圳市威尔健半导体有限公司