N-channel vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES: • Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown

文件：74.24 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES: • Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown

文件：63.63 Kbytes 页数：12 Pages

PHI

飞利浦

Automotive Grade SiC Power Module

Features · HSDIP20 package with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Tvjmax = 175°C · Compact design · With high thermal conductivity isolation · Integrated NTC temperature sensor · 4.2kV AC 1s insulation

文件：1.18006 Mbytes 页数：15 Pages

ROHM

罗姆

Automotive Grade SiC Power Module

Features · HSDIP20 package with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Tvjmax = 175°C · Compact design · With high thermal conductivity isolation · Integrated NTC temperature sensor · 4.2kV AC 1s insulation

文件：1.31201 Mbytes 页数：22 Pages

ROHM

罗姆

Automotive Grade SiC Power Module

Features · HSDIP20 package with the 4th Generation SiC-MOSFET · VDSS = 1200V · Low RDS(on) · High-speed switching possible · Low switching losses · Tvjmax = 175°C · Compact design · With high thermal conductivity isolation · Integrated NTC temperature sensor · 4.2kV AC 1s insulation

文件：1.18132 Mbytes 页数：15 Pages

ROHM

罗姆

N-channel vertical D-MOS transistor

DESCRIPTION\nN-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.FEATURES:\n• Very low RDS(on)\n• Direct interface to C-MOS, TTL, etc.\n• High-speed switching\n• No second breakdown

恩XP

恩智浦

HSDIP20, 1200V, 70/38A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module

The BST70M2P4K01 is a high-performance SiC molded module rated for 1200V, designed with a 6-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature eve • HSDIP20 package with the 4th Generation SiC-MOSFET\n• VDSS = 1200V\n• Low RDS(on)\n• High-speed switching possible\n• Low switching losses\n• Tvjmax = 175°C\n• Compact design\n• With high thermal conductivity isolation\n• Integrated NTC temperature sensor\n• 4.2kV AC 1s insulation;

ROHM

罗姆

HSDIP20, 1200V, 70A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module

The BST70T2P4K01 is a high-performance SiC molded module rated for 1200V, designed with a 6-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature eve • HSDIP20 package with the 4th Generation SiC-MOSFET\n• VDSS = 1200V\n• Low RDS(on)\n• High-speed switching possible\n• Low switching losses\n• Tvjmax = 175°C\n• Compact design\n• With high thermal conductivity isolation\n• Integrated NTC temperature sensor\n• 4.2kV AC 1s insulation;

ROHM

罗姆