BST52TA

Marking：AS3；Package：SOT89；80V NPN SILICON PLANAR DARLINGTON TRANSISTOR IN SOT89

Features •BVCEO>80V •Highcurrentgain •MaxContinuousCurrentIC=500mA •Fastswitching •LeadFree,RoHSCompliant(Note1) •HalogenandAntimonyFree,“Green”Device(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability

CT220RMV-HS5

Marking：ASY；Package：SOT23；XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

CT220RMV-IS5

Marking：ASY；Package：SOT23；XtremeSense™ High-Linearity, High-Resolution TMR Current Sensor with FLAG Output in Miniature Form Factor

•ACorDCcontactlesscurrentsensing •Inherentlyhighisolation •Magneticfield(current)range: □±1.5mT □±5.0mT □±10.0mT □±15.0mT •Stableperformanceovertemperature •Supplycurrent:~1.2mA •FLAGPintoindicate90and10offullfieldrange □Activelowdigitaloutput

DMN2040U-13

Marking：AS9；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications GeneralPurposeInterfacingSwitch PowerManagementFunct

DMN2040U-7

Marking：AS9；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications GeneralPurposeInterfacingSwitch PowerManagementFunct

DMN2053UQ-13

Marking：AS2；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2053UQissuitableforautomotiveapplications requiringspecificch

DMN2053UQ-7

Marking：AS2；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2053UQissuitableforautomotiveapplications requiringspecificch

DMN2055UQ-13

Marking：AS5；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDIODES™DMN2055UQissuitableforautomotiveapplicationsrequiringspec

DMN2055UQ-7

Marking：AS5；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDIODES™DMN2055UQissuitableforautomotiveapplicationsrequiringspec

KTA1504

Marking：AS*；Package：SOT-23；PNP Silicon Epitaxial Planar Transistor

FEATURES ●ComplementaryToKTC3875. ●ExcellentHFELinearity. ●Lownoise. APPLICATIONS ●Generalpurposeapplication,switchingapplication.