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BST50

丝印:AS1;Package:SOT89;NPN Darlington transistors

FEATURES •High current (max. 0.5 A) •Low voltage (max. 80 V) •Integrated diode and resistor. APPLICATIONS •Industrial switching applications such as: –Print hammer –Solenoid –Relay and lamp driving. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complements: BS

文件:329.19 Kbytes 页数:9 Pages

NEXPERIA

安世

AIMBG120R010M1

丝印:AS10MM1;Package:PG-TO263-7-HV-ND5.8;CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175 °C • IDDC = 205A at TC = 25°C • RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowe

文件:1.5121 Mbytes 页数:15 Pages

INFINEON

英飞凌

AIMBG120R120M1

丝印:AS120MM1;Package:PG-TO263-7-HV-ND5.8;Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 22 A at TC = 25°C • RDS(on) = 117 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest de

文件:1.64222 Mbytes 页数:16 Pages

INFINEON

英飞凌

AIMBG120R160M1

丝印:AS160MM1;Package:PG-TO263-7-HV-ND5.8;CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 17 A at TC = 25°C • RDS(on) = 160 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest de

文件:1.64709 Mbytes 页数:16 Pages

INFINEON

英飞凌

MT3410L

丝印:AS11DW;Package:SOT23-5;1.3A,2.3V-6V Input,1.5MHz Synchronous Step-Down Converter

GENERAL DESCRIPTION The MT3410L is high-efficiency,high frequency synchronous step-down DC-DC regulator ICs capable of delivering up to 1.3A output currents.The MT3410L can operate over a wide input voltage range from 2.3V to 6V and integrates main switch and synchronous switch with very lo

文件:342.75 Kbytes 页数:8 Pages

ETCList of Unclassifed Manufacturers

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SN74AS1008AD

丝印:AS1008A;Package:SOIC;QUADRUPLE 2-INPUT POSITIVE-AND BUFFER/DRIVER

Driver Version of 4AS08 Offers High Capacitive-Drive Capability Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic (N) 300-mil DIPs description This device contains four independent 2-input positive-AND buffers/drivers. It performs the Boolean functions Y = A

文件:414.64 Kbytes 页数:10 Pages

TI

德州仪器

SN74AS1008AD.A

丝印:AS1008A;Package:SOIC;QUADRUPLE 2-INPUT POSITIVE-AND BUFFER/DRIVER

Driver Version of 4AS08 Offers High Capacitive-Drive Capability Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic (N) 300-mil DIPs description This device contains four independent 2-input positive-AND buffers/drivers. It performs the Boolean functions Y = A

文件:414.64 Kbytes 页数:10 Pages

TI

德州仪器

SN74AS1008ADE4

丝印:AS1008A;Package:SOIC;QUADRUPLE 2-INPUT POSITIVE-AND BUFFER/DRIVER

Driver Version of 4AS08 Offers High Capacitive-Drive Capability Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic (N) 300-mil DIPs description This device contains four independent 2-input positive-AND buffers/drivers. It performs the Boolean functions Y = A

文件:414.64 Kbytes 页数:10 Pages

TI

德州仪器

SN74AS1032AD

丝印:AS1032A;Package:SOIC;QUADRUPLE 2-INPUT POSITIVE-OR BUFFERS/DRIVERS

Driver Version of ′AS32 High Capacitive-Drive Capability Package Options Include Plastic Small-Outline (D) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs description These devices contain four independent 2-input positive-OR buffers/drivers. T

文件:428.2 Kbytes 页数:11 Pages

TI

德州仪器

SN74AS1032AD.A

丝印:AS1032A;Package:SOIC;QUADRUPLE 2-INPUT POSITIVE-OR BUFFERS/DRIVERS

Driver Version of ′AS32 High Capacitive-Drive Capability Package Options Include Plastic Small-Outline (D) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs description These devices contain four independent 2-input positive-OR buffers/drivers. T

文件:428.2 Kbytes 页数:11 Pages

TI

德州仪器

晶体管资料

  • 型号:

    BST50

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    表面帖装型 (SMD)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    1.5A

  • 最大工作频率:

    350MHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SD1470,2SD1472,2SD1511,

  • 最大耗散功率:

  • 放大倍数:

    β>2000

  • 图片代号:

    H-100

  • vtest:

    60

  • htest:

    350000000

  • atest:

    1.5

  • wtest:

    0

详细参数

  • 型号:

    AS1

  • 功能描述:

    达林顿晶体管 TRANS DARLINGTON TAPE-7

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
NEXPERIA/安世
25+
SOT89
600000
NEXPERIA/安世全新特价BST50即刻询购立享优惠#长期有排单订
询价
恩XP
SOT89
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
NEXPERIA/安世
2019+
SOT-89
78550
原厂渠道 可含税出货
询价
NEXPERIA/安世
20+
SOT-89
200000
原装正品 可含税交易
询价
PHI
2021+
SOT-89
6800
原厂原装,欢迎咨询
询价
NEXPERIA/安世
23+
SOT-89
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
ROHM/罗姆
2402+
DIP
14590
优势代理渠道,原装现货,可全系列订货
询价
NEXPERIA/安世
2025+
SOT89
5000
原装进口价格优 请找坤融电子!
询价
恩XP
24+
SOT-89
6363
新进库存/原装
询价
恩XP
12+
SOT89
15000
全新原装,绝对正品,公司现货供应。
询价
更多AS1供应商 更新时间2026-1-17 14:14:00