丝印：AS120MM1；Package：PG-TO263-7-HV-ND5.8；Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = -55 175°C • IDDC = 22 A at TC = 25°C • RDS(on) = 117 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest de

文件：1.64222 Mbytes 页数：16 Pages

INFINEON

英飞凌

汽车级 1200V 碳化硅 (SiC) 沟槽功率 MOSFET，采用 D2PAK-7L 封装，120mΩ

CY8C4146PVE-S432 属于 4100S 系列，提供标准通信和计时外设、具有一流性能的电容式触摸感应系统 (CAPSENSE ™ )、可编程通用连续时间和开关电容模拟模块以及可编程连接。 • 革命性的半导体材料 - 碳化硅\n• 极低的开关损耗\n• 无阈值导通特性\n• 0V 关断栅极电压\n• 基准栅极阈值电压，VGS(th)=4.5V\n• 完全可控 dv/dt\n• 换向稳健的体二极管，可用于同步整流\n• 温度无关的关断开关损耗\n• 用于优化开关性能的感测引脚\n• 适用于高压爬电距离要求\n• XT 互连技术，实现一流的热性能;

Infineon

英飞凌

CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55 175°C • IDDC = 24 A at TC = 25°C • RDS(on) = 117 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest de

文件：1.58634 Mbytes 页数：16 Pages

INFINEON

英飞凌

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55 175°C • IDDC = 22 A at TC = 25°C • RDS(on) = 117 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class swit

文件：1.73328 Mbytes 页数：15 Pages

INFINEON

英飞凌

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55 175°C • IDDC = 22 A at TC = 25°C • RDS(on) = 117 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class swit

文件：1.76408 Mbytes 页数：15 Pages

INFINEON

英飞凌