BC68-25PA

20 V, 2 A NPN medium power transistors

Featuresandbenefits Highcurrent Twocurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BC68-25PA

20 V, 2 A NPN medium power transistors

BC68-25PA-Q

20 V, 2 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Twocurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •Qualifiedaccor

BC68-25PAS

20 V, 2 A NPN medium power transistors

Featuresandbenefits *Highcollectorcurrentcapability ICandICM *Twocurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalconduc

BC68-25PAS

20 V, 2 A NPN medium power transistors

BC68-25PA,115

包装：卷带（TR） 封装/外壳：3-PowerUDFN 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 2A 3HUSON

BC68-25PA-QX

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：3-PowerUDFN 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 2A 3HUSON

BC68-25PASX

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：3-UDFN 裸露焊盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 2A DFN2020D-3

BCP68-25

NPNmediumpowertransistor

DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplement:BCP69. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.20V). APPLICATIONS •Generalpurposeswitchingandamplificationunderhigh currentconditions.

BCP68-25

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat) COMPLEMENTARYTYPE-BCP69 PARTMARKINGDETAIL-BCP68 BCP68-25

BCP68-25

NPNSiliconAFTransistor

NPNSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP69(PNP)

BCP68-25

NPNmediumpowertransistor;20V,1A

Generaldescription NPNmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061

BCP68-25

NPNSiliconAFTransistor

NPNSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP69(PNP)

BCP68-25

NPNSiliconAFTransistor(ForgeneralAFapplicationHighcollectorcurrentHighcurrentgain)

NPNSiliconAFTransistor ●ForgeneralAFapplication ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP69(PNP)

BCP68-25

NPNmediumpowertransistor20V,1A

BCP68-25

20V,2ANPNmediumpowertransistors

BCP68-25

NPNTransistors

BCP68-25

20V,2ANPNmediumpowertransistors

Featuresandbenefits Highcurrent Twocurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP68-25-Q

20V,2ANPNmediumpowertransistors

1.Generaldescription NPNmediumpowertransistorsinamediumpowerSOT223(SC-73)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Twocurrentgainselections •Highpowerdissipationcapability •Qualifiedaccordin

BCX68-25

NPNSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrent)

NPNSiliconAFTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCX69(PNP)