首页 >APM9926DCS>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●20V,26A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40m@VΩGS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,4.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TSSOP-8forSurfaceMountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor Feature ●20V/,6A,RDS(ON)=30mΩ(MAX)@VGS=4.5V.RDS(ON)=40mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-Channel20-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DualN-ChannelEnhancementModeMOSFET Feature ●20V/6A,RDS(ON)=33mΩ(MAX)@VGS=4.5V.RDS(ON)=50mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. Applications ●LI-IONProtectionCircuit | ZPSEMI ZP Semiconductor | ZPSEMI | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,7A,RDS(ON)=25mW@VGS=4.5V. RDS(ON)=34mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,6A,RDS(ON)=27mW@VGS=4.5V. RDS(ON)=40mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor Features VDS(V)=20V ID=7A RDS(ON) | UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?) | UMW | ||
DualN-ChannelEnhancementModeFieldEffectTransistor Features VDS(V)=20V ID=7A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧 | EVVOSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●20V,26A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40m@VΩGS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor VOLTAGE20VoltsCURRENT6Ampere FEATURE *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. *Smallflatpackage.(SO-8) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE20VoltsCURRENT26Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
DualN-ChannelMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | CHAMPChampion Microelectronic Corp. 虹冠虹冠电子工业股份有限公司 | CHAMP | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ANPEC/茂达电子 |
23+ |
SOP-8 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
ANPEC |
24+ |
SOP8 |
3500 |
原装现货,可开13%税票 |
询价 | ||
ANPEC |
23+24 |
SOP8 |
53870 |
原装正品,原盘原标,提供BOM一站式配单 |
询价 | ||
ANPEC |
22+ |
SOP-8 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
ANPEC |
2020+ |
SOP-8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ANPEC |
24+ |
SOP-8 |
317 |
原装正品,假一罚十! |
询价 | ||
茂达 |
1822+ |
SOP-8 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
SINOPOWER |
23+ |
SOP-8 |
63000 |
原装正品现货 |
询价 | ||
AVAGO/安华高 |
23+ |
SOP-8 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
AP |
23+ |
SOP/DIP |
11400 |
正品原装货价格低qq:2987726803 |
询价 |
相关规格书
更多- AQV101
- AQV201
- AQV203
- AQV210
- AQV210S
- AQV212
- AQV214A
- AQV214H
- AQV221
- AQV251A
- AQV253
- AQV257
- AQV414
- AQV414E
- AQV414S
- AQW210TS
- AQW214
- AQW214EH
- AQW614
- AQY210EH
- AQY214EHAX
- AR7519
- ARA1400
- AS002M2
- AS1004
- AS1012
- AS1117
- AS1117-3.3
- AS1117M3
- AS115-61
- AS1200
- AS125-73
- AS128-73
- AS1431
- AS1581T
- AS1582T
- AS160-86
- AS1717D
- AS172-73
- AS178-73
- AS182-73
- AS190-73
- AS193-73
- AS212-93
- AS2208
相关库存
更多- AQV101A
- AQV201A
- AQV204
- AQV210EH
- AQV210SX
- AQV214
- AQV214EA
- AQV214S
- AQV251
- AQV252
- AQV254
- AQV257A
- AQV414A
- AQV414EAX
- AQW210S
- AQW212
- AQW214A
- AQW414
- AQW614A
- AQY210SX
- AR7120
- ARA05050
- ARK1491
- AS002R2-12
- AS1004S
- AS103-59
- AS1117-2.5
- AS1117-ADJ
- AS1117M3-3.3
- AS119-12
- AS123-12
- AS127-59
- AS139-73
- AS1580T
- AS1581T-2.5
- AS1582T-2.5
- AS169-73
- AS1719D
- AS173-73
- AS179-92
- AS186-302
- AS191-73
- AS2000P
- AS218-321
- AS2208A
